Electron transport through quantum-dot states of n-type carbon nanotubes

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We calculate electron transmission in carbon nanotube field-effect-transistors, based on a tight-binding model. For positive gate voltages, a quantum dot is formed in the nanotube between two regions doped p type by metal contacts, and the resulting quantum dot states give rise to n-type conduction. While p-type currents for negative gate voltages exhibit robustness, n currents sensitively depend on the depletion layer between regions doped p type by the contacts and n type by the gate. This feature explains the polarity of electron transport observed in carbon nanotube transistors. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-09
Language
English
Article Type
Article
Keywords

TRANSISTORS

Citation

APPLIED PHYSICS LETTERS, v.81, no.12, pp.2264 - 2266

ISSN
0003-6951
DOI
10.1063/1.1508415
URI
http://hdl.handle.net/10203/83349
Appears in Collection
NT-Journal Papers(저널논문)PH-Journal Papers(저널논문)
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