DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yong-Hyun | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T16:56:28Z | - |
dc.date.available | 2013-03-04T16:56:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.81, no.12, pp.2264 - 2266 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83349 | - |
dc.description.abstract | We calculate electron transmission in carbon nanotube field-effect-transistors, based on a tight-binding model. For positive gate voltages, a quantum dot is formed in the nanotube between two regions doped p type by metal contacts, and the resulting quantum dot states give rise to n-type conduction. While p-type currents for negative gate voltages exhibit robustness, n currents sensitively depend on the depletion layer between regions doped p type by the contacts and n type by the gate. This feature explains the polarity of electron transport observed in carbon nanotube transistors. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TRANSISTORS | - |
dc.title | Electron transport through quantum-dot states of n-type carbon nanotubes | - |
dc.type | Article | - |
dc.identifier.wosid | 000177911200041 | - |
dc.identifier.scopusid | 2-s2.0-79958189583 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 2264 | - |
dc.citation.endingpage | 2266 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1508415 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Yong-Hyun | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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