Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

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dc.contributor.authorLee, HSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, TWko
dc.contributor.authorChoo, DCko
dc.contributor.authorKim, MDko
dc.contributor.authorSeo, SYko
dc.contributor.authorShin, JungHoonko
dc.date.accessioned2013-03-04T11:32:49Z-
dc.date.available2013-03-04T11:32:49Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-05-
dc.identifier.citationJOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10203/82527-
dc.description.abstractAtomic force microscope (AFM), transmission electron microscopy (TEM), and photoluminescence measurements were carried out to investigate the dependence of the InAs quantum dot size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots (QDs) grown on (0 0 1) GaAs substrates. AFM and TEM images showed that the size of the QDs increased with increase in the stacked layer number up to the deposition time of 20 s. However, the size distribution uniformity of the QDs was improved with increase in the stacked layer number when the deposition time and the stacking layer of the InAs QDs gradually decreased. These results can help in an improved understanding of the control of sizes of QDs in InAs/GaAs QD arrays. (C) 2002 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMODULATION-DOPED HETEROSTRUCTURES-
dc.subjectSTRAINED EPITAXY-
dc.subjectGAAS-
dc.subjectGROWTH-
dc.subjectTRANSITION-
dc.subjectISLANDS-
dc.subjectLASERS-
dc.titleDependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots-
dc.typeArticle-
dc.identifier.wosid000176143800010-
dc.identifier.scopusid2-s2.0-0036565857-
dc.type.rimsART-
dc.citation.volume241-
dc.citation.issue1-2-
dc.citation.beginningpage63-
dc.citation.endingpage68-
dc.citation.publicationnameJOURNAL OF CRYSTAL GROWTH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorLee, HS-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorChoo, DC-
dc.contributor.nonIdAuthorKim, MD-
dc.contributor.nonIdAuthorSeo, SY-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcharacterization-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthorsemiconducting III-V materials-
dc.subject.keywordPlusMODULATION-DOPED HETEROSTRUCTURES-
dc.subject.keywordPlusSTRAINED EPITAXY-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusISLANDS-
dc.subject.keywordPlusLASERS-
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