DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HK | ko |
dc.contributor.author | Kwon, D | ko |
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Ihm, YE | ko |
dc.contributor.author | Kim, D | ko |
dc.contributor.author | Kim, H | ko |
dc.contributor.author | Baek, JS | ko |
dc.contributor.author | Kim, CS | ko |
dc.contributor.author | Choo, Woong Kil | ko |
dc.date.accessioned | 2013-03-04T11:16:09Z | - |
dc.date.available | 2013-03-04T11:16:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.282, pp.244 - 247 | - |
dc.identifier.issn | 0304-8853 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82465 | - |
dc.description.abstract | Polycrystalline Si1-xMnx semiconductor thin films were grown on SiO2/(1 0 0)Si substrates at 400degreesC using a molecular beam epitaxy, and their magnetic and electrical properties have been studied. The polycrystalline Si1-xMnx semiconductor has p-type carriers and electrical resistivity is 2.0 x 10(-4) - 1.3 x 10(-3) Omegacm at room temperature. Saturation magnetization increases with Mn concentration and reaches a maximum of 12.8 emu/cm(3) at Mn 28.8 at%. Magnetization characteristics and X-ray analysis reveal the ferromagnetic SiMn phase and the anti-ferromagnetic Si3Mn5 phase are the major magnetic phases formed in the polycrystalline Si1-xMnx semiconductors. (C) 2004 Published by Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier Science Bv | - |
dc.subject | FERROMAGNETIC-SEMICONDUCTOR | - |
dc.subject | THIN-FILMS | - |
dc.subject | TRANSITIONS | - |
dc.subject | GAAS | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | NANOCLUSTERS | - |
dc.subject | MN5SI3 | - |
dc.title | Magnetic phases in polycrystalline Si1-xMnx semiconductors grown by MBE | - |
dc.type | Article | - |
dc.identifier.wosid | 000224811200056 | - |
dc.identifier.scopusid | 2-s2.0-6344227990 | - |
dc.type.rims | ART | - |
dc.citation.volume | 282 | - |
dc.citation.beginningpage | 244 | - |
dc.citation.endingpage | 247 | - |
dc.citation.publicationname | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.contributor.nonIdAuthor | Kim, HK | - |
dc.contributor.nonIdAuthor | Kwon, D | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Ihm, YE | - |
dc.contributor.nonIdAuthor | Kim, D | - |
dc.contributor.nonIdAuthor | Kim, H | - |
dc.contributor.nonIdAuthor | Baek, JS | - |
dc.contributor.nonIdAuthor | Kim, CS | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | MnSi | - |
dc.subject.keywordAuthor | magnetic semiconductor | - |
dc.subject.keywordAuthor | spintronics materials | - |
dc.subject.keywordPlus | FERROMAGNETIC-SEMICONDUCTOR | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | NANOCLUSTERS | - |
dc.subject.keywordPlus | MN5SI3 | - |
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