DC Field | Value | Language |
---|---|---|
dc.contributor.author | c.h. lee | ko |
dc.contributor.author | k.t. kang | ko |
dc.contributor.author | k.s. park | ko |
dc.contributor.author | m.s. kim | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.contributor.author | j.e. fischer | ko |
dc.contributor.author | a.t. johnson | ko |
dc.date.accessioned | 2013-03-04T08:26:46Z | - |
dc.date.available | 2013-03-04T08:26:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-08 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.8, pp.5392 - 5394 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82167 | - |
dc.description.abstract | The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a TubeFET into charge traps on the surface of the SiO2 gate dielectric, thus shifting the threshold voltage. This memory can be written and erased many times, and has a hold time of hundreds of seconds at room. temperature: At second we have attempted to make a Peapod tubeFET. It is the structure that a C-60 was contained within the tube and separated from it by a graphitic Van der Waals gap. I-V property of the Peapod shows semiconducting property. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.title | The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000185422900104 | - |
dc.identifier.scopusid | 2-s2.0-0142043916 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 5392 | - |
dc.citation.endingpage | 5394 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | c.h. lee | - |
dc.contributor.nonIdAuthor | k.t. kang | - |
dc.contributor.nonIdAuthor | k.s. park | - |
dc.contributor.nonIdAuthor | m.s. kim | - |
dc.contributor.nonIdAuthor | j.e. fischer | - |
dc.contributor.nonIdAuthor | a.t. johnson | - |
dc.type.journalArticle | Article | - |
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