Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

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A GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in an extended cavity structure. A VCSEL device had a long extended cavity, which consisted of a sapphire substrate as well as a GaN epilayer and had an integrated microlens on one side. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. The laser was optically pumped and operated at room temperature. The VCSEL device lased at a low threshold excitation intensity of 160 kW/cm(2). In contrast to a conventional microcavity-VCSEL structure, the VCSEL operated in multiple longitudinal modes with mode spacing consistent with its physical thickness. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-09
Language
English
Article Type
Article
Keywords

DISTRIBUTED BRAGG REFLECTORS; CHEMICAL-VAPOR-DEPOSITION; WAVE

Citation

APPLIED PHYSICS LETTERS, v.83, no.11, pp.2121 - 2123

ISSN
0003-6951
DOI
10.1063/1.1611643
URI
http://hdl.handle.net/10203/82018
Appears in Collection
PH-Journal Papers(저널논문)
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