DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, SH | ko |
dc.contributor.author | Kim, J | ko |
dc.contributor.author | Jeon, H | ko |
dc.contributor.author | Sakong, T | ko |
dc.contributor.author | Lee, SN | ko |
dc.contributor.author | Chae, S | ko |
dc.contributor.author | Park, Y | ko |
dc.contributor.author | Jeong, CH | ko |
dc.contributor.author | Yeom, GY | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2013-03-04T07:34:04Z | - |
dc.date.available | 2013-03-04T07:34:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.83, no.11, pp.2121 - 2123 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82018 | - |
dc.description.abstract | A GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in an extended cavity structure. A VCSEL device had a long extended cavity, which consisted of a sapphire substrate as well as a GaN epilayer and had an integrated microlens on one side. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. The laser was optically pumped and operated at room temperature. The VCSEL device lased at a low threshold excitation intensity of 160 kW/cm(2). In contrast to a conventional microcavity-VCSEL structure, the VCSEL operated in multiple longitudinal modes with mode spacing consistent with its physical thickness. (C) 2003 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DISTRIBUTED BRAGG REFLECTORS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | WAVE | - |
dc.title | Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme | - |
dc.type | Article | - |
dc.identifier.wosid | 000185231000011 | - |
dc.identifier.scopusid | 2-s2.0-0142090004 | - |
dc.type.rims | ART | - |
dc.citation.volume | 83 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 2121 | - |
dc.citation.endingpage | 2123 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1611643 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Park, SH | - |
dc.contributor.nonIdAuthor | Kim, J | - |
dc.contributor.nonIdAuthor | Jeon, H | - |
dc.contributor.nonIdAuthor | Sakong, T | - |
dc.contributor.nonIdAuthor | Lee, SN | - |
dc.contributor.nonIdAuthor | Chae, S | - |
dc.contributor.nonIdAuthor | Park, Y | - |
dc.contributor.nonIdAuthor | Jeong, CH | - |
dc.contributor.nonIdAuthor | Yeom, GY | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DISTRIBUTED BRAGG REFLECTORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | WAVE | - |
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