Effect of dislocations on grain growth in strontium titanate

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dc.contributor.authorChung, Sung-Yoonko
dc.contributor.authorKang, Suk-Joong Lko
dc.date.accessioned2008-12-19T03:00:25Z-
dc.date.available2008-12-19T03:00:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-11-
dc.identifier.citationJOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.83, no.11, pp.2828 - 2832-
dc.identifier.issn0002-7820-
dc.identifier.urihttp://hdl.handle.net/10203/8139-
dc.description.abstractTwo series of experiments were done to investigate the effect of dislocations on grain growth in SrTiO3. In the first series, we observed the growth behavior of a single-crystal plate toward a TiO2-excess SrTiO3 powder compact, containing different dislocation densities on two equivalent {100} surfaces. The surface with a higher dislocation density exhibited faster growth, showing interface mobility enhancement by dislocation, In the second series, a polycrystalline SrTiO3 sample which had been plastically deformed by hot pressing was embedded in a TiO2-excess SrTiO3 powder compact, and its growth behavior toward the powder compact was compared with that of a sample without hot pressing. As with a single crystal, the grains with the higher dislocation density in the plastically deformed sample grew faster. In addition, some grains in the plastically deformed sample showed the characteristic of abnormal grain growth. The transmission electron microscopy (TEM) observations on a sintered TiO2-excess SrTiO3 showed that the abnormally large grains contained many dislocations while the fine matrix grains contained practically no dislocations, This result suggests that the uneven distribution of dislocations between grains is possibly one of the causes of the abnormal grain growth in polycrystalline SrTiO3.-
dc.languageEnglish-
dc.language.isoenen
dc.publisherAMER CERAMIC SOC-
dc.titleEffect of dislocations on grain growth in strontium titanate-
dc.typeArticle-
dc.identifier.wosid000165235600031-
dc.identifier.scopusid2-s2.0-0034319676-
dc.type.rimsART-
dc.citation.volume83-
dc.citation.issue11-
dc.citation.beginningpage2828-
dc.citation.endingpage2832-
dc.citation.publicationnameJOURNAL OF THE AMERICAN CERAMIC SOCIETY-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChung, Sung-Yoon-
dc.contributor.localauthorKang, Suk-Joong L-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusBOUNDARY-LAYER CAPACITOR-
dc.subject.keywordPlusINTERFACE MIGRATION-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusDOPED SRTIO3-
dc.subject.keywordPlusLIQUID-PHASE-
dc.subject.keywordPlusATMOSPHERE-
dc.subject.keywordPlusMICROSTRUCTURE-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusCERAMICS-
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