DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김현수 | ko |
dc.contributor.author | 이정주 | ko |
dc.contributor.author | 정순영 | ko |
dc.contributor.author | 이정용 | ko |
dc.contributor.author | J.T.Lin | ko |
dc.contributor.author | H.X.Jiang | ko |
dc.date.accessioned | 2013-03-04T00:39:44Z | - |
dc.date.available | 2013-03-04T00:39:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-03 | - |
dc.identifier.citation | 한국재료학회지, v.12, no.3, pp.190 - 194 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81120 | - |
dc.language | Korean | - |
dc.publisher | 한국재료학회 | - |
dc.title | MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향 | - |
dc.title.alternative | The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 190 | - |
dc.citation.endingpage | 194 | - |
dc.citation.publicationname | 한국재료학회지 | - |
dc.identifier.kciid | ART000993969 | - |
dc.contributor.localauthor | 이정용 | - |
dc.contributor.nonIdAuthor | 김현수 | - |
dc.contributor.nonIdAuthor | 이정주 | - |
dc.contributor.nonIdAuthor | 정순영 | - |
dc.contributor.nonIdAuthor | J.T.Lin | - |
dc.contributor.nonIdAuthor | H.X.Jiang | - |
dc.subject.keywordAuthor | Ⅲ-nitride semiconductors | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | multi-layers | - |
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