Magnetoresistance in laser-deposited Zn1-xCoxO thin films

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dc.contributor.authorKim, JHko
dc.contributor.authorKim, Hko
dc.contributor.authorKim, Dko
dc.contributor.authorIhm, YEko
dc.contributor.authorChoo, Woong Kilko
dc.date.accessioned2013-03-03T23:33:53Z-
dc.date.available2013-03-03T23:33:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-04-
dc.identifier.citationPHYSICA B-CONDENSED MATTER, v.327, pp.304 - 306-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10203/80933-
dc.description.abstractWe have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn1-xCoxO:Al film shows a giant positive MR as high as similar to 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering. (C) 2002 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectDILUTED MAGNETIC SEMICONDUCTOR-
dc.subjectMODEL-
dc.subjectZNO-
dc.titleMagnetoresistance in laser-deposited Zn1-xCoxO thin films-
dc.typeArticle-
dc.identifier.wosid000181648900041-
dc.type.rimsART-
dc.citation.volume327-
dc.citation.beginningpage304-
dc.citation.endingpage306-
dc.citation.publicationnamePHYSICA B-CONDENSED MATTER-
dc.identifier.doi10.1016/S0921-4526(02)01774-X-
dc.contributor.nonIdAuthorKim, JH-
dc.contributor.nonIdAuthorKim, H-
dc.contributor.nonIdAuthorKim, D-
dc.contributor.nonIdAuthorIhm, YE-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthormagnetoresistance-
dc.subject.keywordAuthordiluted magnetic semiconductors-
dc.subject.keywordAuthorZnCoO-
dc.subject.keywordPlusDILUTED MAGNETIC SEMICONDUCTOR-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusZNO-
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