Experiments and modeling study on growth behavior of Cr-nitrides formed on electroplated hard Cr during ion-nitriding

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dc.contributor.authorEom, JYko
dc.contributor.authorRao, VSko
dc.contributor.authorKwon, Hyuk-Sangko
dc.contributor.authorNam, KSko
dc.contributor.authorKwon, SCko
dc.date.accessioned2013-03-03T21:51:52Z-
dc.date.available2013-03-03T21:51:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-04-
dc.identifier.citationJOURNAL OF MATERIALS RESEARCH, v.18, pp.861 - 867-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10203/80596-
dc.description.abstractThe structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ion-nitriding process were analyzed, and its growth kinetics was examined as a function of the ion-nitriding temperature and time to establish a computer simulation model for the prediction of growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at 550-770 degreesC were composed of outer CrN and inner Cr2N layers. A nitrogen diffusion model in the multilayer, based on fixed-grid finite difference method, was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of Cr-nitride layers as a function of ion-nitriding temperature and time, the activation energy (Q) and nitrogen diffusion constant (DO) were determined for growth of CrN and Cr2N; the result was applied to simulate the growth kinetics of Cr-nitride layers, and reasonable good agreement was obtained with the experimental results.-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOC-
dc.titleExperiments and modeling study on growth behavior of Cr-nitrides formed on electroplated hard Cr during ion-nitriding-
dc.typeArticle-
dc.identifier.wosid000182063400018-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.beginningpage861-
dc.citation.endingpage867-
dc.citation.publicationnameJOURNAL OF MATERIALS RESEARCH-
dc.identifier.doi10.1557/JMR.2003.0118-
dc.contributor.localauthorKwon, Hyuk-Sang-
dc.contributor.nonIdAuthorEom, JY-
dc.contributor.nonIdAuthorRao, VS-
dc.contributor.nonIdAuthorNam, KS-
dc.contributor.nonIdAuthorKwon, SC-
dc.type.journalArticleArticle-
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