DC Field | Value | Language |
---|---|---|
dc.contributor.author | min-hee cho | ko |
dc.contributor.author | youn-seon kang | ko |
dc.contributor.author | hae-yeol kim | ko |
dc.contributor.author | paul s. lee | ko |
dc.contributor.author | Lee, Jai Young | ko |
dc.date.accessioned | 2013-03-03T20:08:51Z | - |
dc.date.available | 2013-03-03T20:08:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.2, pp.F7 - F9 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/80219 | - |
dc.description.abstract | Hydrogenated aluminum nitride (AlN:H) thin films have been deposited on silicon (100) wafers by radio frequency reactive magnetron sputtering. Although the as-deposited AlN:H films exhibit smooth surface and low oxygen concentration, they are chemically unstable. The presence of N-H bonds is known to cause chemical instability and an increase of the etching rate in KOH solution. The AlN:H films, which are treated with nitrogen plasma generated by a microwave system, show a much lower etching rate than that of as-deposited AlN:H or even as-deposited AlN films. After nitrogen plasma treatment, the Al-N bonding density in AlN:H films has increased sharply, while N-H bonding density has decreased. It means that the hydrogen atoms in the films diffuse out during the process, so that more chemically-stable AlN:H films are formed. (C) 2001 The Electrochemical Society. | - |
dc.language | English | - |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | SPUTTERING PRESSURE | - |
dc.subject | ALN | - |
dc.subject | SURFACE | - |
dc.subject | MICROSTRUCTURE | - |
dc.subject | ORIENTATION | - |
dc.subject | EVOLUTION | - |
dc.subject | DEFECTS | - |
dc.subject | LAYERS | - |
dc.subject | AIN | - |
dc.title | Enhancement of Chemical Stability of Hydrogenated Aluminum Nitride Thin Films by Nitrogen Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.wosid | 000167325800008 | - |
dc.identifier.scopusid | 2-s2.0-0035262731 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | F7 | - |
dc.citation.endingpage | F9 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.contributor.nonIdAuthor | min-hee cho | - |
dc.contributor.nonIdAuthor | youn-seon kang | - |
dc.contributor.nonIdAuthor | hae-yeol kim | - |
dc.contributor.nonIdAuthor | paul s. lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SPUTTERING PRESSURE | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | AIN | - |
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