Lead germanate (Pb5Ge3O11) thin films with c-axis preferred orientation were prepared by pulsed laser deposition and RTA process and ferroelectric properties were obtained in the films. RBS composition analysis indicated that films were formed close to stoichiometric target composition at oxygen pressure below 2 mTorr during deposition. Films post-annealed at 550degreesC for 10minutes showed symmetrical hysteresis loops with remanent polarization of about 1 muC/cm(2) and coercive field of 92 kV/cm at an applied voltage 5 V. The leakage current density of films is about 6.5 x 10(-7) A/cm(2) at 100 kV/cm.