Piezoelectric hysteresis measurement using atomic force microscopy

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Local piezoelectric hysteresis of Pb(Zr,Ti)O-3 thin films were measured using atomic force microscopy and lock-in amplifier. PZT films were prepared by sol-gel processing and rf-sputtering. PZT films exhibit inverse piezoelectric response on application of a voltage. To detect such a small response of the thin (less than 100 run in thickness) PZT films, ac modulation technique was used. Actual displacements were obtained by the calibration of the first harmonic signal (Acostheta) from X-cut quartz crystal (piezoelectric coefficient of 23pm/V). Coercive voltages and the maximum displacements were measured, respectively, from the deconvoluted phase and amplitude. As calibrated, the effective local piezoelectric coefficient were 5.8 and 11.5 in arbitrary unit from sot-gel processed and sputtered films. In case of the PZT films processed by sol-gel technique showed a larger local variation of the piezoelectric response and smaller displacements than the sputtered PZT films with similar film thickness.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2001
Language
English
Article Type
Article; Proceedings Paper
Keywords

FERROELECTRIC THIN-FILMS; SCANNING PROBE MICROSCOPE; POLARIZED DOMAINS

Citation

INTEGRATED FERROELECTRICS, v.38, no.1-4, pp.675 - 682

ISSN
1058-4587
URI
http://hdl.handle.net/10203/7954
Appears in Collection
MS-Journal Papers(저널논문)
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