DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YT | ko |
dc.contributor.author | Kim, IS | ko |
dc.contributor.author | Kim, SI | ko |
dc.contributor.author | Yoo, DC | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-03T15:10:53Z | - |
dc.date.available | 2013-03-03T15:10:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-10 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.94, pp.4859 - 4862 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/79174 | - |
dc.description.abstract | We have studied the atomic structure of YMnO3 deposited on Si and Y2O3 with high-resolution transmission electron microscopy and fast Fourier transforms-filtered lattice image analysis during furnace and rapid thermal annealing (RTA) processes. For the YMnO3/Si, it is found that the YMnO3 layer is c-axis oriented with an amorphous bottom region after furnace annealing at 850 degreesC for 1 h. In contrast, after RTA at 850 degreesC for 3 min the bottom region forms YMnO3 polycrystalline layer with the {(1) over bar2 (1) over bar2} plane parallel to the surface. When an Y2O3 layer is interposed between YMnO3 and Si, a c-axis oriented YMnO3 layer grows on a [111]-oriented Y2O3 layer. Memory window and leakage current density of the c-axis YMnO3/[111] Y2O3 bilayers are strongly improved due to an aligned [0001] unipolar axis. (C) 2003 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FERROELECTRICITY | - |
dc.title | Atomic structure of random and c-axis oriented YMnO3 thin films deposited on Si and Y2O3/Si substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000185664300019 | - |
dc.identifier.scopusid | 2-s2.0-0242335736 | - |
dc.type.rims | ART | - |
dc.citation.volume | 94 | - |
dc.citation.beginningpage | 4859 | - |
dc.citation.endingpage | 4862 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, YT | - |
dc.contributor.nonIdAuthor | Kim, IS | - |
dc.contributor.nonIdAuthor | Kim, SI | - |
dc.contributor.nonIdAuthor | Yoo, DC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
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