The effect of thermal annealings of PZT thin films prepared by sol-gel

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Properties of Pb(Zr0.52Ti0.48)O-3 ferroelectric thin films prepared by rapid thermal annealing(RTA)/direct insertion thermal annealing(DITA) were investigated. The morphologies and ferroelectric properties are affected strongly by thermal treatment. The remnant polarization(Pr), and coercive force(Ec) of typical sample are about 13.7 mu C/cm(2) and 55.6 kV/cm, respectively. The dielectric constant and loss tangent are 786 and 2.4 % at 100 Hz respectively. The PZT film prepared by RTA and dried at 350 degreesC possesses desirable ferroelectric and insulation properties, which is applicable to FRAM or piezoelectric MEMS.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2002-01
Language
English
Article Type
Article; Proceedings Paper
Citation

FERROELECTRICS, v.271, pp.1783 - 1788

ISSN
0015-0193
URI
http://hdl.handle.net/10203/79093
Appears in Collection
MS-Journal Papers(저널논문)
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