Composition and electrical properties of metallic Ru thin films deposited using Ru(C6H6)(C6H8) precursor

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dc.contributor.authorChoi, Jko
dc.contributor.authorChoi, Yko
dc.contributor.authorHong, Jko
dc.contributor.authorTian, Hko
dc.contributor.authorRoh, JSko
dc.contributor.authorKim, Yko
dc.contributor.authorChung, TMko
dc.contributor.authorOh, YWko
dc.contributor.authorKim, CGko
dc.contributor.authorNo, Kwangsooko
dc.date.accessioned2008-11-24T02:33:53Z-
dc.date.available2008-11-24T02:33:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-11-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, pp.6852 - 6856-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/7903-
dc.description.abstractMetallic ruthenium films were prepared by metalorganic chemical vapor deposition (CVD) using a new precursor named (eta(6)-benzene)(eta(4)-1,3-cyclohexadiene)ruthenium (Ru(C6H6)C6H8)) in Ar atmosphere, and the absolute composition and electrical properties were investigated. The absolute composition including hydrogen was determined by means of the elastic recoil detection time of flight (ERD-TOF). It was found that carbon contents in the films markedly decreased when tetrahydrofuran (THF) was supplied with the precursor during deposition. The variation in carbon content could be interpreted by the formation of hydrocarbon compounds as well as the formation of carbon oxide, resulting from the reaction between carbon and THF. In particular, Ru films contained hydrogen that originated in the hydrogen atoms in the precursor and was involved in the CVD process due to the catalytic effect of ruthenium on hydrocarbon and hydrogen. It was shown that grain size, among several other factors strongly affected the electrical properties of ruthenium films. [DOI: 10.1143/JJAP.41.6852]-
dc.description.sponsorshipConsortium of Semiconductor Advanced Research Applied Superconductivity Technology R&D Programen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherJapan Soc Applied Physics-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectELECTRODES-
dc.titleComposition and electrical properties of metallic Ru thin films deposited using Ru(C6H6)(C6H8) precursor-
dc.typeArticle-
dc.identifier.wosid000182730300053-
dc.identifier.scopusid2-s2.0-3042845794-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.beginningpage6852-
dc.citation.endingpage6856-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorChoi, J-
dc.contributor.nonIdAuthorChoi, Y-
dc.contributor.nonIdAuthorHong, J-
dc.contributor.nonIdAuthorTian, H-
dc.contributor.nonIdAuthorRoh, JS-
dc.contributor.nonIdAuthorKim, Y-
dc.contributor.nonIdAuthorChung, TM-
dc.contributor.nonIdAuthorOh, YW-
dc.contributor.nonIdAuthorKim, CG-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorCVD-
dc.subject.keywordAuthorelectrode-
dc.subject.keywordAuthorRu-
dc.subject.keywordAuthorresistivity-
dc.subject.keywordAuthorprecursor-
dc.subject.keywordAuthorERD-TOF-
dc.subject.keywordAuthorcomposition-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusELECTRODES-
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