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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers

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dc.contributor.authorH.S. Kimko
dc.contributor.authorJ.J. Leeko
dc.contributor.authorS.Y. jeongko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorJ.Y. Linko
dc.contributor.authorH.X. Jiangko
dc.date.accessioned2013-03-03T13:27:02Z-
dc.date.available2013-03-03T13:27:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-
dc.identifier.citationKOREAN JOURNAL OF MATERIALS RESEARCH, v.12, no.3, pp.190 - 194-
dc.identifier.issn1225-0562-
dc.identifier.urihttp://hdl.handle.net/10203/78871-
dc.languageKorean-
dc.publisherMaterials Research Society of Korea-
dc.titleThe Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue3-
dc.citation.beginningpage190-
dc.citation.endingpage194-
dc.citation.publicationnameKOREAN JOURNAL OF MATERIALS RESEARCH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorH.S. Kim-
dc.contributor.nonIdAuthorJ.J. Lee-
dc.contributor.nonIdAuthorS.Y. jeong-
dc.contributor.nonIdAuthorJ.Y. Lin-
dc.contributor.nonIdAuthorH.X. Jiang-
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MS-Journal Papers(저널논문)
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