Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications

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Edge-breakdown free InP-InGaAs avalanche photodiodes (APDs) for 10-Gb/s operation were fabricated. Two-dimensional current profiles were measured to investigate the edge breakdown on double-stepped planar APDs. The edge breakdown prominent at high gain increased with the absorption layer thickness for a fixed multiplication thickness (0.25 mum). The edge breakdown was suppressed for 0.4-mum absorption layer at the gain of ten. A simple physical model was proposed to predict the results successfully. To suppress the edge breakdown, the multiplication layer thickness should be selected so that the breakdown voltage is minimum at the selected thickness.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-07
Language
English
Article Type
Article
Keywords

IMPACT IONIZATION; DIFFUSED JUNCTION; BREAKDOWN; NOISE

Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.16, no.7, pp.1721 - 1723

ISSN
1041-1135
DOI
10.1109/LPT.2004.829546
URI
http://hdl.handle.net/10203/78862
Appears in Collection
NE-Journal Papers(저널논문)
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