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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications

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dc.contributor.authorBurm, Jko
dc.contributor.authorChoi, JYko
dc.contributor.authorCho, Seungryongko
dc.contributor.authorKim, MDko
dc.contributor.authorYang, SKko
dc.contributor.authorBack, JMko
dc.contributor.authorRhee, DYko
dc.contributor.authorJeon, BOko
dc.contributor.authorKang, HYko
dc.contributor.authorJang, DHko
dc.date.accessioned2013-03-03T13:23:41Z-
dc.date.available2013-03-03T13:23:41Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-07-
dc.identifier.citationIEEE PHOTONICS TECHNOLOGY LETTERS, v.16, no.7, pp.1721 - 1723-
dc.identifier.issn1041-1135-
dc.identifier.urihttp://hdl.handle.net/10203/78862-
dc.description.abstractEdge-breakdown free InP-InGaAs avalanche photodiodes (APDs) for 10-Gb/s operation were fabricated. Two-dimensional current profiles were measured to investigate the edge breakdown on double-stepped planar APDs. The edge breakdown prominent at high gain increased with the absorption layer thickness for a fixed multiplication thickness (0.25 mum). The edge breakdown was suppressed for 0.4-mum absorption layer at the gain of ten. A simple physical model was proposed to predict the results successfully. To suppress the edge breakdown, the multiplication layer thickness should be selected so that the breakdown voltage is minimum at the selected thickness.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectIMPACT IONIZATION-
dc.subjectDIFFUSED JUNCTION-
dc.subjectBREAKDOWN-
dc.subjectNOISE-
dc.titleEdge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications-
dc.typeArticle-
dc.identifier.wosid000222278900039-
dc.identifier.scopusid2-s2.0-4344690753-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.issue7-
dc.citation.beginningpage1721-
dc.citation.endingpage1723-
dc.citation.publicationnameIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.identifier.doi10.1109/LPT.2004.829546-
dc.contributor.localauthorCho, Seungryong-
dc.contributor.nonIdAuthorBurm, J-
dc.contributor.nonIdAuthorChoi, JY-
dc.contributor.nonIdAuthorKim, MD-
dc.contributor.nonIdAuthorYang, SK-
dc.contributor.nonIdAuthorBack, JM-
dc.contributor.nonIdAuthorRhee, DY-
dc.contributor.nonIdAuthorJeon, BO-
dc.contributor.nonIdAuthorKang, HY-
dc.contributor.nonIdAuthorJang, DH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoravalanche photodiodes (APDs)-
dc.subject.keywordAuthoroptical communication-
dc.subject.keywordAuthorsemiconductor device breakdown-
dc.subject.keywordPlusIMPACT IONIZATION-
dc.subject.keywordPlusDIFFUSED JUNCTION-
dc.subject.keywordPlusBREAKDOWN-
dc.subject.keywordPlusNOISE-
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