Characteristics of tunneling nitride grown by electron cyclotron resonance nitrogen plasma nitridation and its application to low voltage EEPROM
- Publisher
- The Japan Society of Applied Physics
- Issue Date
- 2001-04
- Language
- English
- Citation
JAPANESE JOURNAL OF THE APPLIED PHYSICS, v.40, no.4b, pp.2693 - 2698
- ISSN
- 0021-4922
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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