Characteristics of tunneling nitride grown by electron cyclotron resonance nitrogen plasma nitridation and its application to low voltage EEPROM
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | kyeong-sik min | ko |
| dc.contributor.author | jin-yong chung | ko |
| dc.contributor.author | Lee, Kwyro | ko |
| dc.date.accessioned | 2013-03-03T13:11:44Z | - |
| dc.date.available | 2013-03-03T13:11:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-04 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF THE APPLIED PHYSICS, v.40, no.4b, pp.2693 - 2698 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/78802 | - |
| dc.language | English | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Characteristics of tunneling nitride grown by electron cyclotron resonance nitrogen plasma nitridation and its application to low voltage EEPROM | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 40 | - |
| dc.citation.issue | 4b | - |
| dc.citation.beginningpage | 2693 | - |
| dc.citation.endingpage | 2698 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF THE APPLIED PHYSICS | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | kyeong-sik min | - |
| dc.contributor.nonIdAuthor | jin-yong chung | - |
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