Surface potential relaxation of ferroelectric domain investigated by Kelvin probe force microscopy

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dc.contributor.authorKim, Ji-Yoonko
dc.contributor.authorKim, Yun-Seokko
dc.contributor.authorNo, Kwang-Sooko
dc.contributor.authorBuhlmann, Simonko
dc.contributor.authorHong, Daniel Seungbumko
dc.contributor.authorNam, Yun-Wooko
dc.contributor.authorKim, Seung-Hyunko
dc.date.accessioned2008-11-19T05:51:13Z-
dc.date.available2008-11-19T05:51:13Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-
dc.identifier.citationINTEGRATED FERROELECTRICS, v.85, pp.25 - 30-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/7879-
dc.description.abstractWe attempted to investigate the surface potential relaxation of ferroelectric thin film domain by using Kelvin probe force microscopy (KFM). To avoid charge suction phenomenon by a grounded tip, the offset voltage was applied to the base line of the pulse trace. It was found that the surface potential contrast decreased in terms of elapsed time. Spreading a charge around domain makes the surface potential contrast decrease. Coulomb force repulsion and retention loss contributed to the spreading of surface charges on the ferroelectric domain. These results help us understand surface potential relaxation of nanoscale ferroelectric domains.-
dc.description.sponsorshipSamsung Advanced Institute of Technologyen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherTAYLOR FRANCIS LTD-
dc.subjectTHIN-FILMS-
dc.titleSurface potential relaxation of ferroelectric domain investigated by Kelvin probe force microscopy-
dc.typeArticle-
dc.identifier.wosid000243260500004-
dc.identifier.scopusid2-s2.0-38849176979-
dc.type.rimsART-
dc.citation.volume85-
dc.citation.beginningpage25-
dc.citation.endingpage30-
dc.citation.publicationnameINTEGRATED FERROELECTRICS-
dc.identifier.doi10.1080/10584580601085552-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorNo, Kwang-Soo-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorKim, Yun-Seok-
dc.contributor.nonIdAuthorBuhlmann, Simon-
dc.contributor.nonIdAuthorNam, Yun-Woo-
dc.contributor.nonIdAuthorKim, Seung-Hyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorferroelectric thin film-
dc.subject.keywordAuthorKFM-
dc.subject.keywordAuthorsurface potential relaxation-
dc.subject.keywordAuthorgrounded tip effect-
dc.subject.keywordAuthorferroelectric domain-
dc.subject.keywordPlusTHIN-FILMS-
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