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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Effect of annealing temperature on the electrical transport properties of CaRuO3-delta thin films directly deposited on the Si substrate

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dc.contributor.authorPaik, Hko
dc.contributor.authorKim, Yko
dc.contributor.authorNo, Kwangsooko
dc.contributor.authorCann, DPko
dc.contributor.authorYoon, Dko
dc.contributor.authorKim, Bko
dc.date.accessioned2008-11-19T05:40:32Z-
dc.date.available2008-11-19T05:40:32Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-07-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.204, pp.2339 - 2346-
dc.identifier.issn0031-8965-
dc.identifier.urihttp://hdl.handle.net/10203/7875-
dc.description.abstractWe investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO3-delta, (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 degrees C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru4+/Ca2+ ion were responsible for the transport properties of CRO thin film. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.description.sponsorship‘Brain Korea 21’ project. We appreciate the measurement of transport property using a He cryostat (Korea Basic Science Institute), and also thanks to Mr. Yunseok Kim for measuring of atomic force microscopy (KAIST).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectGROWTH-
dc.subjectSRRUO3-
dc.subjectTRANSITION-
dc.subjectITINERANT-
dc.subjectINSULATOR-
dc.subjectSI(100)-
dc.subjectMETAL-
dc.subjectSR-
dc.titleEffect of annealing temperature on the electrical transport properties of CaRuO3-delta thin films directly deposited on the Si substrate-
dc.typeArticle-
dc.identifier.wosid000248264100022-
dc.identifier.scopusid2-s2.0-34547494199-
dc.type.rimsART-
dc.citation.volume204-
dc.citation.beginningpage2339-
dc.citation.endingpage2346-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.identifier.doi10.1002/pssa.200622605-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorPaik, H-
dc.contributor.nonIdAuthorKim, Y-
dc.contributor.nonIdAuthorCann, DP-
dc.contributor.nonIdAuthorYoon, D-
dc.contributor.nonIdAuthorKim, B-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusSRRUO3-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusITINERANT-
dc.subject.keywordPlusINSULATOR-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusSR-
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