DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung Kwan | ko |
dc.contributor.author | Kim, Yang-Soo | ko |
dc.contributor.author | Jeon, Young-Ah | ko |
dc.contributor.author | Choi, Jongwan | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.date.accessioned | 2008-11-19T02:58:20Z | - |
dc.date.available | 2008-11-19T02:58:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-12 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, v.17, no.2-4, pp.197 - 203 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | http://hdl.handle.net/10203/7870 | - |
dc.description.abstract | The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L-III-edge and first-principles calculations. Depending on their composition and atomic configurations, Hf4O8 (CN: 7.0), Hf4O5N2 (CN: 6.25) and Hf4O2N4(CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band. | - |
dc.description.sponsorship | Ministry of Education (“Brain Korea 21”) and the Ministry of Science and Technology (MOST),Korea. The experiments at the Pohang Accelerator Laboratory were supported in part by MOST and Pohang Iron and Steel (POSCO). Special thanks Isao Tanaka for supporting the ab initio total-energy and molecular dynamics program VASP (Vienna ab initio simulation package) | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | SPRINGER | - |
dc.subject | OXIDE | - |
dc.title | The electronic structures for the optical absorption of Hf-O-N thin films | - |
dc.type | Article | - |
dc.identifier.wosid | 000243610600018 | - |
dc.identifier.scopusid | 2-s2.0-33847325789 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 2-4 | - |
dc.citation.beginningpage | 197 | - |
dc.citation.endingpage | 203 | - |
dc.citation.publicationname | JOURNAL OF ELECTROCERAMICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Kim, Sung Kwan | - |
dc.contributor.nonIdAuthor | Kim, Yang-Soo | - |
dc.contributor.nonIdAuthor | Jeon, Young-Ah | - |
dc.contributor.nonIdAuthor | Choi, Jongwan | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | hafnium oxynitride thin films | - |
dc.subject.keywordAuthor | electronic structures | - |
dc.subject.keywordAuthor | optical absorption | - |
dc.subject.keywordPlus | OXIDE | - |
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