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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Orientation and fatigue improvement of PZT thin films on cubic textured CaRuO3 electrode

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dc.contributor.authorPaik, Hko
dc.contributor.authorHong, Jko
dc.contributor.authorJeon, YAko
dc.contributor.authorKim, SKko
dc.contributor.authorKim, Yko
dc.contributor.authorKim, Yko
dc.contributor.authorKim, YSko
dc.contributor.authorNo, Kwangsooko
dc.date.accessioned2008-11-19T02:26:43Z-
dc.date.available2008-11-19T02:26:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationINTEGRATED FERROELECTRICS, v.75, pp.115 - 121-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/7866-
dc.description.abstractIn this study, we report on the (100) cube-textured Pb(Zr 0.4 ,Ti 0.6 )O 3 (PZT) thin films using a conducting perovskite CaRuO 3 (CRO) bottom electrode, and which was compared to the (111) textured PZT on Pt electrode. X-ray diffraction (XRD) reveals that the CRO bottom electrode has a pseudo-cubic nature on Si, and the PZT thin films prepared on CRO/Si shows a (100) textured growth. PZT films on CRO electrode have a well-saturated ferroelectricity with a remanent polarization (P r ) and coercive field (E c ) of 25 mu C/cm 2 and 75 kV/cm, respectively. These PZT films are more fatigue resistive character than that on Pt bottom electrode.-
dc.description.sponsorshipMinistry of Education (project named “Brain Korea 21”). Dr.Seung-Hyun Kim, in Inostek Inc., Korea, and Heesan Kim, Ph.D. candidate the Department of Material Science & Engineering, KAIST, Korea.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherTAYLOR FRANCIS LTD-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectSILICON-
dc.titleOrientation and fatigue improvement of PZT thin films on cubic textured CaRuO3 electrode-
dc.typeArticle-
dc.identifier.wosid000234232100013-
dc.identifier.scopusid2-s2.0-33645505807-
dc.type.rimsART-
dc.citation.volume75-
dc.citation.beginningpage115-
dc.citation.endingpage121-
dc.citation.publicationnameINTEGRATED FERROELECTRICS-
dc.identifier.doi10.1080/10584580500413442-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorPaik, H-
dc.contributor.nonIdAuthorHong, J-
dc.contributor.nonIdAuthorJeon, YA-
dc.contributor.nonIdAuthorKim, SK-
dc.contributor.nonIdAuthorKim, Y-
dc.contributor.nonIdAuthorKim, Y-
dc.contributor.nonIdAuthorKim, YS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorconductive perovskite oxide-
dc.subject.keywordAuthorfilm orientation-
dc.subject.keywordAuthorfatigue improvement-
dc.subject.keywordAuthorSi substrate-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSILICON-
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