Process and characterization of (Pb, La)TiO3 thin films deposited by MOCVD for gigabit DRAM application

Abstract

La-modified lead titanate. (Pb, La)TiO3. [PLT], thin films were deposited by low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/Si substrates. The composition of the films was studied with various deposition conditions. Also, the electrical properties. such as the dielectric constant, the P-E hysteresis curve, and the leakage current density, were investigated with various annealing conditions. The experimental results show that the 180nm-thick PLT films with the La mole % of 12 are applicable as the planar capacitor layer of 1 gigabit DRAM.