Prerequisite for photoluminescence D line spectra of heat-treated carbon-lean Czochralski silicon crystals

Abstract

We present a systematic experimental investigation on the prerequisite for D Line luminescence at the photon energies of 0.81 and 0.87eV in heat-treated carbon-lean Czochralski (CZ) silicon crystals. For examination of the influence of a transition metal on photoluminescence D lines, carbon-lean CZ silicon wafers annealed using simulated MOS thermal cycles were deliberately contaminated with Cu. The results show that the presence of specific extended defects, i.e., planar-type defects bounded by {111} planes and composed of 60 degrees-type dislocations and stacking faults in this experiment, is a prerequisite for the generation of D1 and D2 lines in heat-treated carbon-lean CZ silicon crystals, and that the diffusion of Cu into the heat-treated samples reduces the D2 line intensity significantly whereas it enhances D1 line luminescence up to a certain level of Cu contamination.