DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, SK | ko |
dc.contributor.author | Choi, WK | ko |
dc.contributor.author | Cho, JS | ko |
dc.contributor.author | Jung, HJ | ko |
dc.contributor.author | Choi, D | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Baik, HK | ko |
dc.contributor.author | Koh, SK | ko |
dc.date.accessioned | 2013-03-03T08:33:36Z | - |
dc.date.available | 2013-03-03T08:33:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.4A, pp.2281 - 2287 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77989 | - |
dc.description.abstract | Tin oxide (SnOx) thin films were deposited by ion-assisted deposition (IAD) at various ion beam voltages (V-I) onto amorphous SiO2/Si substrate at room temperature. Tin oxide thin films with nonstoichiometric/stoichiometric composition were fabricated. The as-deposited SnOx films were mostly amorphous, but they exhibited various degrees of crystallinity and fine grain size after annealing at 500 degrees C for Ih in air. The annealed film deposited using an ion beam energy (E-I) of 300 eV showed a preferred orientation along the SnO2 (110) plane. The preferred orientation changed to SnO2 (002) for film 1000 (the annealed film deposited with E-I = 1000 eV) through an amorphous intermediate structure of film 500 (the annealed film deposited with E-I = 500 eV). X-ray photoelectron spectroscopy study showed that the main Sn3d peaks in all samples were similar to the binding energy of Sn4+ and the atomic ratios for all the films were higher than 1.51. For the film grown under an average energy of 123 eV/atom, the refractive index was 2.0 and the estimated porosity was 5.2% smaller than that of the other films. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | GAS SENSORS | - |
dc.title | Effect of oxygen ion energy and annealing in formation of tin oxide thin films | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WY79900054 | - |
dc.identifier.scopusid | 2-s2.0-0031125782 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 4A | - |
dc.citation.beginningpage | 2281 | - |
dc.citation.endingpage | 2287 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Song, SK | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.contributor.nonIdAuthor | Cho, JS | - |
dc.contributor.nonIdAuthor | Jung, HJ | - |
dc.contributor.nonIdAuthor | Choi, D | - |
dc.contributor.nonIdAuthor | Baik, HK | - |
dc.contributor.nonIdAuthor | Koh, SK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | SnOx | - |
dc.subject.keywordAuthor | porosity | - |
dc.subject.keywordAuthor | oxygen adsorption | - |
dc.subject.keywordAuthor | composition ratio | - |
dc.subject.keywordAuthor | oxygen ion-assisted deposition | - |
dc.subject.keywordAuthor | crystallinity | - |
dc.subject.keywordAuthor | oxidation state of tin | - |
dc.subject.keywordPlus | GAS SENSORS | - |
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