Strain effects in CdxZn1-xTe/ZnTe double quantum-wells

Abstract

Transmission electron microscopy (TEM) measurements were performed to investigate strain effects in CdxZn1-xTe/ZnTe double quantum-wells. The results of bright and high-resolution TEM images show that the two 180-Angstrom Cd0.26Zn0.74Te quantum-wells are separated by a 150-Angstrom Cd0.1Zn0.9Te potential barrier. The selected area electron-diffraction pattern obtained from the TEM of the CdxZn1-xTe/ZnTe double quantum-well shows that the CdxZn1-xTe active epilayers are grown pseudomorphologically on the ZnTe buffer layer. The values of the horizontal and the vertical strains of the CdxZn1-xTe active layer are - 4.83 x 10(-3) and 5.70 x 10(-3). respectively, and the magnitude of the horizontal stress is 2.92 x 10(8) N cm(-2). These results can help improve understanding of the structural and the optical properties for the applications of strained CdxZn1-xTe/ZnTe double quantum-wells in optoelectronic devices. (C) 1999 Elsevier Science Ltd. All rights reserved.