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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

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dc.contributor.authorKim, KSko
dc.contributor.authorHong, CHko
dc.contributor.authorLee, WHko
dc.contributor.authorKim, CSko
dc.contributor.authorCha, OHko
dc.contributor.authorYang, GMko
dc.contributor.authorSuh, EKko
dc.contributor.authorLim, KYko
dc.contributor.authorLee, HJko
dc.contributor.authorCho, HKko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorSeo, JMko
dc.date.accessioned2013-03-03T08:09:57Z-
dc.date.available2013-03-03T08:09:57Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-01-
dc.identifier.citationMRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 74-
dc.identifier.issn1092-5783-
dc.identifier.urihttp://hdl.handle.net/10203/77906-
dc.description.abstractThin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a (1-102) facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOCIETY-
dc.subjectLASER-DIODES-
dc.subjectINAS/GAAS-
dc.titleFabrication and characterization of InGaN nano-scale dots for blue and green LED applications-
dc.typeArticle-
dc.identifier.wosid000090103600122-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.beginningpage11-
dc.citation.endingpage74-
dc.citation.publicationnameMRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, KS-
dc.contributor.nonIdAuthorHong, CH-
dc.contributor.nonIdAuthorLee, WH-
dc.contributor.nonIdAuthorKim, CS-
dc.contributor.nonIdAuthorCha, OH-
dc.contributor.nonIdAuthorYang, GM-
dc.contributor.nonIdAuthorSuh, EK-
dc.contributor.nonIdAuthorLim, KY-
dc.contributor.nonIdAuthorLee, HJ-
dc.contributor.nonIdAuthorCho, HK-
dc.contributor.nonIdAuthorSeo, JM-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusLASER-DIODES-
dc.subject.keywordPlusINAS/GAAS-
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MS-Journal Papers(저널논문)
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