Lattice mismatch and atomic structure studies on InxGa1-xAs/In(y)Al(1-y)AS coupled double-step quantum wells

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dc.contributor.authorKim, TWko
dc.contributor.authorLee, DUko
dc.contributor.authorLim, YSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorYoo, KHko
dc.contributor.authorKim, MDko
dc.date.accessioned2013-03-03T08:09:28Z-
dc.date.available2013-03-03T08:09:28Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-01-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.153, no.2-3, pp.102 - 107-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/77905-
dc.description.abstractLattice mismatch and atomic structure studies of InxGa1-xAs/InyAl1-yAs coupled double-step quantum wells have been performed by transmission electron microscopy (TEM) and electron-diffraction pattern measurements. The high-resolution TEM image of the InxGa1-xAs/InyAl1-yAs coupled double-step quantum well showed that two sets of a 60-Angstrom In0.65Ga0.35As deep quantum well and a 60-Angstrom In0.35Ga0.47As shallow step quantum wells bounded by two thick In0.52Al0.48As barriers are separated by a 38-Angstrom In0.52Al0.48As embedded potential barrier, The selective-area electron-diffraction pattern obtained from TEM measurements on the InxGa1-xAs/InyAl1-yAs double-step quantum well showed that InxGa1-xAs active layers were grown pseudomorphologically on the InP buffer layer. The value of the lattice mismatch between the In0.53Ga0.47As and the In0.65Ga0.35As layers obtained from the high-resolution TEM measurements is 1.6%. A possible crystal structure for the InxGa1-xAs/InyAl1-yAs coupled double-step quantum well is presented based on the TEM results. These results can help improve understanding of the structural properties for the applications of strained InxGa1-xAs/InyAl1-y. As coupled double-step quantum wells in new kind of the optoelectronic devices. (C) 2000 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectINTERSUBBAND TRANSITIONS-
dc.subjectHETEROSTRUCTURES-
dc.subjectSUBBAND-
dc.subjectGROWTH-
dc.subjectFIELD-
dc.titleLattice mismatch and atomic structure studies on InxGa1-xAs/In(y)Al(1-y)AS coupled double-step quantum wells-
dc.typeArticle-
dc.identifier.wosid000084901600005-
dc.identifier.scopusid2-s2.0-0033905761-
dc.type.rimsART-
dc.citation.volume153-
dc.citation.issue2-3-
dc.citation.beginningpage102-
dc.citation.endingpage107-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorLee, DU-
dc.contributor.nonIdAuthorLim, YS-
dc.contributor.nonIdAuthorYoo, KH-
dc.contributor.nonIdAuthorKim, MD-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorInxGa1-xAs/InyAl1-yAs-
dc.subject.keywordAuthoratomic structure-
dc.subject.keywordAuthorstrain effects-
dc.subject.keywordPlusINTERSUBBAND TRANSITIONS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusSUBBAND-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFIELD-
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