DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Lim, YS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Yoo, KH | ko |
dc.contributor.author | Kim, MD | ko |
dc.date.accessioned | 2013-03-03T08:09:28Z | - |
dc.date.available | 2013-03-03T08:09:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-01 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v.153, no.2-3, pp.102 - 107 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77905 | - |
dc.description.abstract | Lattice mismatch and atomic structure studies of InxGa1-xAs/InyAl1-yAs coupled double-step quantum wells have been performed by transmission electron microscopy (TEM) and electron-diffraction pattern measurements. The high-resolution TEM image of the InxGa1-xAs/InyAl1-yAs coupled double-step quantum well showed that two sets of a 60-Angstrom In0.65Ga0.35As deep quantum well and a 60-Angstrom In0.35Ga0.47As shallow step quantum wells bounded by two thick In0.52Al0.48As barriers are separated by a 38-Angstrom In0.52Al0.48As embedded potential barrier, The selective-area electron-diffraction pattern obtained from TEM measurements on the InxGa1-xAs/InyAl1-yAs double-step quantum well showed that InxGa1-xAs active layers were grown pseudomorphologically on the InP buffer layer. The value of the lattice mismatch between the In0.53Ga0.47As and the In0.65Ga0.35As layers obtained from the high-resolution TEM measurements is 1.6%. A possible crystal structure for the InxGa1-xAs/InyAl1-yAs coupled double-step quantum well is presented based on the TEM results. These results can help improve understanding of the structural properties for the applications of strained InxGa1-xAs/InyAl1-y. As coupled double-step quantum wells in new kind of the optoelectronic devices. (C) 2000 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | INTERSUBBAND TRANSITIONS | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | SUBBAND | - |
dc.subject | GROWTH | - |
dc.subject | FIELD | - |
dc.title | Lattice mismatch and atomic structure studies on InxGa1-xAs/In(y)Al(1-y)AS coupled double-step quantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | 000084901600005 | - |
dc.identifier.scopusid | 2-s2.0-0033905761 | - |
dc.type.rims | ART | - |
dc.citation.volume | 153 | - |
dc.citation.issue | 2-3 | - |
dc.citation.beginningpage | 102 | - |
dc.citation.endingpage | 107 | - |
dc.citation.publicationname | APPLIED SURFACE SCIENCE | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Lim, YS | - |
dc.contributor.nonIdAuthor | Yoo, KH | - |
dc.contributor.nonIdAuthor | Kim, MD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | InxGa1-xAs/InyAl1-yAs | - |
dc.subject.keywordAuthor | atomic structure | - |
dc.subject.keywordAuthor | strain effects | - |
dc.subject.keywordPlus | INTERSUBBAND TRANSITIONS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SUBBAND | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FIELD | - |
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