DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, KS | ko |
dc.contributor.author | Han, MS | ko |
dc.contributor.author | Yang, GM | ko |
dc.contributor.author | Youn, CJ | ko |
dc.contributor.author | Lee, HJ | ko |
dc.contributor.author | Cho, HK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-03T07:47:10Z | - |
dc.date.available | 2013-03-03T07:47:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77842 | - |
dc.description.abstract | The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Omega cm) and a high hole concentration (8.5x10(17) cm(-3)) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10(-4) Omega cm(2), which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10(-3) Omega cm(2)). (C) 2000 American Institute of Physics. [S0003-6951(00)02234-8]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | GROWN GAN | - |
dc.subject | SUPERLATTICES | - |
dc.subject | SI | - |
dc.title | Codoping characteristics of Zn with Mg in GaN | - |
dc.type | Article | - |
dc.identifier.wosid | 000088791600019 | - |
dc.identifier.scopusid | 2-s2.0-0000972314 | - |
dc.type.rims | ART | - |
dc.citation.volume | 77 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1123 | - |
dc.citation.endingpage | 1125 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1289494 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, KS | - |
dc.contributor.nonIdAuthor | Han, MS | - |
dc.contributor.nonIdAuthor | Yang, GM | - |
dc.contributor.nonIdAuthor | Youn, CJ | - |
dc.contributor.nonIdAuthor | Lee, HJ | - |
dc.contributor.nonIdAuthor | Cho, HK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | GROWN GAN | - |
dc.subject.keywordPlus | SUPERLATTICES | - |
dc.subject.keywordPlus | SI | - |
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