DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JG | ko |
dc.contributor.author | Yu, Jin | ko |
dc.date.accessioned | 2013-03-03T06:09:10Z | - |
dc.date.available | 2013-03-03T06:09:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-11 | - |
dc.identifier.citation | JOURNAL OF MATERIALS RESEARCH, v.13, no.11, pp.3027 - 3033 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77569 | - |
dc.description.abstract | Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) d(phi psi) - sin(2) psi, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3-4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from -0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress. | - |
dc.language | English | - |
dc.publisher | CAMBRIDGE UNIV PRESS | - |
dc.subject | INTRINSIC STRESS | - |
dc.subject | SILICON | - |
dc.subject | NUCLEATION | - |
dc.subject | SUBSTRATE | - |
dc.subject | RAMAN | - |
dc.subject | GROWTH | - |
dc.subject | CVD | - |
dc.subject | ADHESION | - |
dc.subject | STRAIN | - |
dc.subject | LAYERS | - |
dc.title | A study on the residual stress measurement methods on chemical vapor deposition diamond films | - |
dc.type | Article | - |
dc.identifier.wosid | 000076758200004 | - |
dc.identifier.scopusid | 2-s2.0-0032203536 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3027 | - |
dc.citation.endingpage | 3033 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS RESEARCH | - |
dc.contributor.localauthor | Yu, Jin | - |
dc.contributor.nonIdAuthor | Kim, JG | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INTRINSIC STRESS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | LAYERS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.