Improved quantum efficiency by overneutralization of ionomers used in polymer light-emitting diodes

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Polymer light-emitting diodes are fabricated using poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) as an emissive material, and sodium sulfonated polystyrene (SSPS) ionomers with several different neutralization levels as an electron injecting and hole blocking layer. The SSPS with higher neutralization level makes the EL device more efficient. The highest efficiency was found at 200% overneutralization of the ionomer. The main reason fur this is that the overneutralization in the ionomer helps to form a more favorable morphology to block holes better by Lightening the cluster.
Publisher
GORDON BREACH SCI PUBL LTD
Issue Date
2000-12
Language
English
Article Type
Article; Proceedings Paper
Citation

MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.349, no.1, pp.455 - 458

ISSN
1058-725X
URI
http://hdl.handle.net/10203/76641
Appears in Collection
CBE-Journal Papers(저널논문)
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