Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

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The characteristics of GaAs/InGaP heterostructures grown on exact (001), (Oaf) oriented 6 degrees off toward (111)A, and (112)B GaAs substrates by metal-organic vapor phase epitaxy were investigated by photoluminescence. All samples studied exhibited anomalous optical behaviors, that is, strong luminescence peaks below the GaAs band edge. It is observed that when thin GaAsP layer is grown in-between the GaAs and InGaP, the GaAs band edge emission is recovered. From the results, we conclude that the below GaAs band edge luminescence from the GaAs-on-InGaP interface is from the InGaAs formed at the interface by In carryover from InGaP to GaAs layer.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1997-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

ELECTRON-GAS; HETEROSTRUCTURES; DEPOSITION; INTERFACES

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162

ISSN
0374-4884
URI
http://hdl.handle.net/10203/76415
Appears in Collection
PH-Journal Papers(저널논문)
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