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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

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dc.contributor.authorKwon, YHko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorChoe, BDko
dc.contributor.authorPark, SKko
dc.contributor.authorJeong, WGko
dc.contributor.authorYu, JSko
dc.contributor.authorChoo, AGko
dc.contributor.authorKim, TLko
dc.date.accessioned2013-03-03T01:10:52Z-
dc.date.available2013-03-03T01:10:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-06-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/76415-
dc.description.abstractThe characteristics of GaAs/InGaP heterostructures grown on exact (001), (Oaf) oriented 6 degrees off toward (111)A, and (112)B GaAs substrates by metal-organic vapor phase epitaxy were investigated by photoluminescence. All samples studied exhibited anomalous optical behaviors, that is, strong luminescence peaks below the GaAs band edge. It is observed that when thin GaAsP layer is grown in-between the GaAs and InGaP, the GaAs band edge emission is recovered. From the results, we conclude that the below GaAs band edge luminescence from the GaAs-on-InGaP interface is from the InGaAs formed at the interface by In carryover from InGaP to GaAs layer.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectELECTRON-GAS-
dc.subjectHETEROSTRUCTURES-
dc.subjectDEPOSITION-
dc.subjectINTERFACES-
dc.titleOptical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy-
dc.typeArticle-
dc.identifier.wosidA1997XJ37500033-
dc.identifier.scopusid2-s2.0-0031478522-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.beginningpage160-
dc.citation.endingpage162-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKwon, YH-
dc.contributor.nonIdAuthorChoe, BD-
dc.contributor.nonIdAuthorPark, SK-
dc.contributor.nonIdAuthorJeong, WG-
dc.contributor.nonIdAuthorYu, JS-
dc.contributor.nonIdAuthorChoo, AG-
dc.contributor.nonIdAuthorKim, TL-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusELECTRON-GAS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusINTERFACES-
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PH-Journal Papers(저널논문)
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