Surface micromachined solenoid on-Si and on-glass inductors for RF applications

Abstract

RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Omega. cm) has been investigated and the results are compared with the same inductors on glass, The solenoid inductor on Si with a 15-mu m thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH, This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm(2), Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.