DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, C | ko |
dc.contributor.author | Lee, C | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2013-03-03T00:05:55Z | - |
dc.date.available | 2013-03-03T00:05:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-11 | - |
dc.identifier.citation | SOLID STATE COMMUNICATIONS, v.100, no.6, pp.377 - 380 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76169 | - |
dc.description.abstract | Metastable defects generated by hole injection under the constant current condition are studied above room temperature. Defect saturation behavior is observed after sufficient period of current soaking, which is faster at higher temperatures. The saturated defect density ij obtained from the space charge limited current. We propose a simple model for the defect kinetics in which hole induced defect creation and annihilation as well as thermal annealing processes are considered. This model includes dispersive hydrogen diffusion and fits well with the present experimental data. Copyright (C) 1996 Elsevier Science Ltd | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Defect generation by hole injection in hydrogenated amorphous silicon | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VP42000002 | - |
dc.identifier.scopusid | 2-s2.0-0030286073 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 377 | - |
dc.citation.endingpage | 380 | - |
dc.citation.publicationname | SOLID STATE COMMUNICATIONS | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Kim, C | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | electronic states (localized) | - |
dc.subject.keywordPlus | A-SI-H | - |
dc.subject.keywordPlus | INDUCED METASTABLE DEFECTS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | STATES | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.