Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy

Cited 6 time in webofscience Cited 7 time in scopus
  • Hit : 264
  • Download : 0
We report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by Liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by these deep states. To elucidate the characteristics of the interface traps, the deep-level transient spectroscopy (DLTS) measurements are performed. It is found from the DLTS measurements that the electron traps distributed over the energy range of 0.4-0.8 eV below the conduction-band minimum are presented at the InGaP/AlCaAs heterointerface. These interface traps are found to induce an abnormal dependence of C-V profiles and the conduction-band offset on the temperature. The origin of these states and their influence to the electrical and optical properties are also discussed. (C) 1997 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1997-06
Language
English
Article Type
Article
Keywords

CONDUCTION-BAND DISCONTINUITIES; LEVEL TRANSIENT SPECTROSCOPY; SINGLE HETEROSTRUCTURE; ISOTYPE HETEROJUNCTION; PROFILING TECHNIQUE; DEEP LEVELS; CENTERS; OFFSETS; DIODES; TRAPS

Citation

JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366

ISSN
0021-8979
DOI
10.1063/1.365334
URI
http://hdl.handle.net/10203/75970
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0