DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Choe, BD | ko |
dc.contributor.author | Kim, Y | ko |
dc.contributor.author | Lim, H | ko |
dc.date.accessioned | 2013-03-02T23:14:48Z | - |
dc.date.available | 2013-03-02T23:14:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-06 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75970 | - |
dc.description.abstract | We report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by Liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by these deep states. To elucidate the characteristics of the interface traps, the deep-level transient spectroscopy (DLTS) measurements are performed. It is found from the DLTS measurements that the electron traps distributed over the energy range of 0.4-0.8 eV below the conduction-band minimum are presented at the InGaP/AlCaAs heterointerface. These interface traps are found to induce an abnormal dependence of C-V profiles and the conduction-band offset on the temperature. The origin of these states and their influence to the electrical and optical properties are also discussed. (C) 1997 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CONDUCTION-BAND DISCONTINUITIES | - |
dc.subject | LEVEL TRANSIENT SPECTROSCOPY | - |
dc.subject | SINGLE HETEROSTRUCTURE | - |
dc.subject | ISOTYPE HETEROJUNCTION | - |
dc.subject | PROFILING TECHNIQUE | - |
dc.subject | DEEP LEVELS | - |
dc.subject | CENTERS | - |
dc.subject | OFFSETS | - |
dc.subject | DIODES | - |
dc.subject | TRAPS | - |
dc.title | Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XC34800036 | - |
dc.identifier.scopusid | 2-s2.0-0000150442 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 7362 | - |
dc.citation.endingpage | 7366 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.365334 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Choe, BD | - |
dc.contributor.nonIdAuthor | Kim, Y | - |
dc.contributor.nonIdAuthor | Lim, H | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CONDUCTION-BAND DISCONTINUITIES | - |
dc.subject.keywordPlus | LEVEL TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | SINGLE HETEROSTRUCTURE | - |
dc.subject.keywordPlus | ISOTYPE HETEROJUNCTION | - |
dc.subject.keywordPlus | PROFILING TECHNIQUE | - |
dc.subject.keywordPlus | DEEP LEVELS | - |
dc.subject.keywordPlus | CENTERS | - |
dc.subject.keywordPlus | OFFSETS | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | TRAPS | - |
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