DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, JT | ko |
dc.contributor.author | Park, HH | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.contributor.author | Jun, CH | ko |
dc.contributor.author | Kim, YT | ko |
dc.contributor.author | Song, YH | ko |
dc.contributor.author | Kim, J | ko |
dc.date.accessioned | 2013-03-02T21:10:01Z | - |
dc.date.available | 2013-03-02T21:10:01Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.5A, pp.2451 - 2454 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75527 | - |
dc.description.abstract | The interfacial reaction between Al metal and boron-doped polysilicon was investigated to understand the mechanism of link formation in the planar type antifuse with a polysilicon pad and two Al electrodes. In the antifuse, the Si-Al alloy filament with a low resistance was formed only on the boron-doped polysilicon pad, not on the phosphorus-doped or undoped polysilicon pads. After annealing Al/boron-doped polysilicon at 400 degrees C for 20 min, an Al-B compound (AlB2) was found by the reaction between Al metal and solute borons at the grain boundaries of polysilicon using Auger electron spectroscopy, X-ray diffractometer, and X-ray photoelectron spectroscopy. In the planar type antifuse device, the formation of AlB2 at the grain boundaries might act as a seed for the conductive filament formation by supplying Al from the positive electrode. After forming a low resistance Si-Al alloy filament, it grows toward the negative electrode by the reaction between supplied Al and highly reactive solute borons segregated at the grain boundaries. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | LINK | - |
dc.title | Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device | - |
dc.type | Article | - |
dc.identifier.wosid | 000075481200008 | - |
dc.identifier.scopusid | 2-s2.0-0032064664 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 5A | - |
dc.citation.beginningpage | 2451 | - |
dc.citation.endingpage | 2454 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Baek, JT | - |
dc.contributor.nonIdAuthor | Park, HH | - |
dc.contributor.nonIdAuthor | Jun, CH | - |
dc.contributor.nonIdAuthor | Kim, YT | - |
dc.contributor.nonIdAuthor | Song, YH | - |
dc.contributor.nonIdAuthor | Kim, J | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | antifuse device | - |
dc.subject.keywordAuthor | filament formation | - |
dc.subject.keywordAuthor | boron-doped polysilicon | - |
dc.subject.keywordAuthor | boron segregation | - |
dc.subject.keywordAuthor | AlB2 compound | - |
dc.subject.keywordPlus | LINK | - |
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