Interface reactions between manganese zinc ferrite single crystals and SiO2-PbO-ZnO ternary systems

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dc.contributor.authorKim, Do Kyungko
dc.contributor.authorKim, Chong Heeko
dc.contributor.authorJe, HJko
dc.contributor.authorHong, KSko
dc.contributor.authorPark, BWko
dc.contributor.authorJang, SDko
dc.date.accessioned2013-03-02T20:45:38Z-
dc.date.available2013-03-02T20:45:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-12-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.78, no.12, pp.7045 - 7052-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/75449-
dc.description.abstractInterface reactions between Mn-Zn ferrite single crystals and SiO2-PbO-ZnO ternary systems were investigated using scanning electron microscope, electron probe microanalyzer, and x-ray diffractometer. The addition of ZnO in a SiO2-PbO glass resulted in inhibition of formation of the intermediate phase and suppression of dissolution of the ferrite. The interface morphology became a dendrite structure with increase of ZnO concentration in the glass. Appearance of the anomalous concentration profile of Zn and Mn at the ferrite adjacent to the interface was investigated in terms of the dissolved quantity of Mn and Zn ion. It was found that Zn ion has dissolved from the ferrite into the glass melt during the reaction and Mn ion in the ferrite dissolved into the glass melt more than Zn ion, resulting in changing the undissolved ferrite adjacent to the interface into a Zn-rich Mn-Zn ferrite, Mn0.16Zn0.85Fe2O4, after reaction with 57SiO(2)-38PbO-5ZnO (in mol %) glass. It was considered that the source of the hump of Zn concentration at the ferrite adjacent to the interface would be the undissolved, remaining Zn ions. A microscopic model was suggested. (C) 1995 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAmer Inst Physics-
dc.subjectGLASS-
dc.titleInterface reactions between manganese zinc ferrite single crystals and SiO2-PbO-ZnO ternary systems-
dc.typeArticle-
dc.identifier.wosidA1995TK56200023-
dc.identifier.scopusid2-s2.0-0040535632-
dc.type.rimsART-
dc.citation.volume78-
dc.citation.issue12-
dc.citation.beginningpage7045-
dc.citation.endingpage7052-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorKim, Do Kyung-
dc.contributor.nonIdAuthorJe, HJ-
dc.contributor.nonIdAuthorHong, KS-
dc.contributor.nonIdAuthorPark, BW-
dc.contributor.nonIdAuthorJang, SD-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGLASS-
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