Luminescence quenching in erbium-doped hydrogenated amorphous silicon

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Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence al 1.54 mu m, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300-400 degrees C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. (C) 1996 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1996-01
Language
English
Article Type
Article
Keywords

SI

Citation

APPLIED PHYSICS LETTERS, v.68, no.1, pp.46 - 48

ISSN
0003-6951
DOI
10.1063/1.116751
URI
http://hdl.handle.net/10203/75137
Appears in Collection
NT-Journal Papers(저널논문)
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