DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | Serna, R | ko |
dc.contributor.author | vandenHoven, GN | ko |
dc.contributor.author | Polman, A | ko |
dc.contributor.author | vanSark, WGJHM | ko |
dc.contributor.author | Vredenberg, AM | ko |
dc.date.accessioned | 2013-03-02T19:22:21Z | - |
dc.date.available | 2013-03-02T19:22:21Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.68, no.1, pp.46 - 48 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75137 | - |
dc.description.abstract | Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence al 1.54 mu m, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300-400 degrees C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. (C) 1996 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SI | - |
dc.title | Luminescence quenching in erbium-doped hydrogenated amorphous silicon | - |
dc.type | Article | - |
dc.identifier.wosid | A1996TM84700016 | - |
dc.identifier.scopusid | 2-s2.0-0029752464 | - |
dc.type.rims | ART | - |
dc.citation.volume | 68 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 46 | - |
dc.citation.endingpage | 48 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.116751 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Serna, R | - |
dc.contributor.nonIdAuthor | vandenHoven, GN | - |
dc.contributor.nonIdAuthor | Polman, A | - |
dc.contributor.nonIdAuthor | vanSark, WGJHM | - |
dc.contributor.nonIdAuthor | Vredenberg, AM | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SI | - |
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