Amorphous (100) platelet formation in (100)Si induced by hydrogen plasma treatment

Abstract

The defect formation in (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma treatment has been studied. The temperature effect on crystalline defect morphology is studied by transmission electron microscopy and high resolution transmission electron microscopy. A high density of hydrogen-stabilized {111} platelets is observed at 240 degrees C, whereas a large number of amorphous {100} platelets is observed at 385 degrees C. The formation of amorphous {100} platelets without {111} platelets at 385 degrees C is reported. The amorphous {100} platelet at 385 degrees C results from the precipitation of oxygen promoted by hydrogen-enhanced oxygen diffusion. The low-temperature photoluminescence study and the spreading resistance profiles fur the hydrogenated Si support the proposed mechanism of the amorphous {100} platelet. (C) 1997 American Institute of Physics.