DC Field | Value | Language |
---|---|---|
dc.contributor.author | Soh, JW | ko |
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2013-03-02T16:49:21Z | - |
dc.date.available | 2013-03-02T16:49:21Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.11B, pp.1518 - 1520 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74532 | - |
dc.description.abstract | Highly c-axis oriented AlN films were fabricated on various substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a substrate temperature of 500 degrees C. The degree of c-axis orientation depends sensitively on the substrate: the standard deviations sigma of AlN(0002) rocking curve peaks are 4.9 degrees, 4.8 degrees, 4.3 degrees, 4.0 degrees and 1.5 degrees on SiO2, Si3N4, Si(100), Si(111) and alpha-Al2O3(0001) substrates, respectively The amorphous interfacial silicon oxide layer on Si substrate has an important effect on the degree of c-axis orientation and in-plane alignment of the AlN film. The AlN films prepared by ECR PECVD have much lower surface roughness (R(RMS) = 1.1-1.9 nm) than the sputter-deposited films (R(RMS) = 3.0-9.0 nm), which offers lower propagation loss in SAW devices. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.title | Substrate effects on the epitaxial growth of AlN thin films using electron cyclotron resonance plasma enhanced chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VV23900015 | - |
dc.identifier.scopusid | 2-s2.0-0030286912 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 11B | - |
dc.citation.beginningpage | 1518 | - |
dc.citation.endingpage | 1520 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Soh, JW | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminum nitride | - |
dc.subject.keywordAuthor | piezoelectric | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | ECR PECVD | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordPlus | SILICON | - |
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