Effect of twinning on the grain shape of crystallized amorphous Si0.7Ge0.3 thin films on SiO2

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dc.contributor.authorKim, HSko
dc.contributor.authorLee, JeongYongko
dc.date.accessioned2013-03-02T16:13:52Z-
dc.date.available2013-03-02T16:13:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.73, no.19, pp.2739 - 2741-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/74366-
dc.description.abstractThe grain morphology of Si0.7Ge0.3 depends on the number of the primary noncoplanar twin variants formed at the early stage of solid-phase crystallization. The grain with major twin bands of a single twin variant parallel to a {111} plane develops an elongated shape, owing to the preferential growth in a < 112 > direction along twins. When the grain has major twin bands of two or more noncoplanar twin variants, the growth front between noncoplanar twin bands develops as fast as the < 112 > direction along twins propagates, because such a growth front is formed from a {111} ledge. As results, the grain becomes more or less equiaxed due to the increasing number of primary, noncoplanar twin variants. (C) 1998 American Institute of Physics. [S0003-6951(98)02945-3].-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectPOLYCRYSTALLINE SILICON-
dc.subjectTRANSISTORS-
dc.titleEffect of twinning on the grain shape of crystallized amorphous Si0.7Ge0.3 thin films on SiO2-
dc.typeArticle-
dc.identifier.wosid000076736900013-
dc.identifier.scopusid2-s2.0-21944435278-
dc.type.rimsART-
dc.citation.volume73-
dc.citation.issue19-
dc.citation.beginningpage2739-
dc.citation.endingpage2741-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.122575-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, HS-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPOLYCRYSTALLINE SILICON-
dc.subject.keywordPlusTRANSISTORS-
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