Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films

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Reliability of polyoxide grown by electron cyclotron resonance (ECR) N2O-plasma on heavily phosphorus-doped polysilicon has been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). ECR N2O-plasma polyoxide grown on polysilicon with phosphorus of 1 x 10(21) cm(-3) exhibits a significantly high breakdown field of 10 MV/cm and low electron trapping rate of 0.5 V, which are regardless of phosphorus concentration. The improvements are attributed to the smooth polyoxide/polysilicon interface, low phosphorus concentration, and nitrogen-rich layer with strong silicon-nitrogen bonds at the polyoxide/polysilicon interface.
Publisher
MINERALS METALS MATERIALS SOC
Issue Date
1999
Language
English
Article Type
Article
Keywords

ELECTRICAL CHARACTERISTICS

Citation

JOURNAL OF ELECTRONIC MATERIALS, v.28, no.12, pp.L31 - L33

ISSN
0361-5235
DOI
10.1007/s11664-999-0144-5
URI
http://hdl.handle.net/10203/73092
Appears in Collection
RIMS Journal Papers
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