DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YM | ko |
dc.contributor.author | Lee, WJ | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-27T23:23:37Z | - |
dc.date.available | 2013-02-27T23:23:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-06 | - |
dc.identifier.citation | THIN SOLID FILMS, v.279, no.1-2, pp.140 - 144 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/71464 | - |
dc.description.abstract | Pb-y(ZrxTi1-x)O-3 films with y = 0.90-0.95 and x = 0.30-0.60 were deposited by metal organic chemical vapour deposition (MOCVD) at low temperatures (360-390 degrees C) at which the homogeneous gas-phase reaction was successfully inhibited. In this low-temperature range, the Pb content increased with increasing temperature and the Zr/Ti ratio was controlled by the carrier gas flow rate. The films were subjected to annealing to form perovskite; 700 degrees C was identified as the optimum annealing temperature. On approaching the morphotropic phase boundary (MPB) region from the Ti-rich composition, the dielectric constant increased and the coercive field decreased. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | GROWTH | - |
dc.title | Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VB37200028 | - |
dc.type.rims | ART | - |
dc.citation.volume | 279 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 140 | - |
dc.citation.endingpage | 144 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Kim, YM | - |
dc.contributor.nonIdAuthor | Lee, WJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | chemical vapour deposition (CVD) | - |
dc.subject.keywordAuthor | lead | - |
dc.subject.keywordAuthor | titanium | - |
dc.subject.keywordAuthor | zirconium | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
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